STP10NK60ZFP STMicroelectronics, STP10NK60ZFP Datasheet - Page 4

• Manufacturer Part Number: STP10NK60ZFP
• Description: MOSFET N-CH 600V 10A TO220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP10NK60ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• For Use With: 497-6416 - BOARD EVAL L5991/STP10NK60Z
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5892-5; STP10NK60ZFP

Electrical ratings
4/19
Table 4.
Symbol
E
E
I
AR
AS
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25 °C, I
Repetitive avalanche energy
(pulse width limited by Tj max)
Avalanche characteristics
D
Parameter
=I
AR
, V
DD
= 50 V)
STB10NK60Z, STP10NK60Z, STW10NK60Z
Max value
300
3.5
9
Unit
mJ
mJ
A