IRF8010PBF International Rectifier, IRF8010PBF Datasheet
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IRF8010PBF
Specifications of IRF8010PBF
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IRF8010PBF Summary of contents
Page 1
... Mounting torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes through are on page 8 IRF8010PbF SMPS MOSFET HEXFET V DSS 100V @ 10V GS @ 10V 175 300 (1.6mm from case ) 1.1(10) Typ. ––– 0.50 – ...
Page 2
... IRF8010PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
Page 3
... IRF8010PbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. ...