IRF5210PBF International Rectifier, IRF5210PBF Datasheet - Page 5

• Manufacturer Part Number: IRF5210PBF
• Description: MOSFET P-CH 100V 40A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5210PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -40 A
• Gate Charge, Total: 180 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 79 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 10 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 40 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF5210PBF

0.01
50
40
30
20
10
0.1
0.00001
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
V
10%
90%
V
GS
DS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
t
≤ 1
r
J
DM
x Z
1
0.1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
-
+
1