IRF5210PBF International Rectifier, IRF5210PBF Datasheet - Page 4

MOSFET P-CH 100V 40A TO-220AB

IRF5210PBF

Manufacturer Part Number
IRF5210PBF
Description
MOSFET P-CH 100V 40A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF5210PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
P
Current, Drain
-40 A
Gate Charge, Total
180 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
79 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
10 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 40 A
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF5210PBF

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Price
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Company:
Part Number:
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Quantity:
25 100
6000
5000
4000
3000
2000
1000
1000
100
10
1
0
0.4
1
T = 175°C
J
C
C
C
-V
-V
iss
rss
oss
0.8
SD
DS
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
T = 25°C
= 0V,
= C
= C
= C
J
1.2
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
1.6
, C
ds
SHORTED
2.0
V
GS
= 0V
100
2.4
A
A
1000
100
20
16
12
10
8
4
0
1
0
1
I
T
T
Single Pulse
D
C
J
= -21A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
-V
40
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
10
80
V
V
V
BY R
DS
DS
DS
= -80V
= -50V
= -20V
DS(on)
120
FOR TEST CIRCUIT
SEE FIGURE 13
100
10µs
100µs
1ms
10ms
160
1000
200
A
A

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