IXTA48N20T IXYS, IXTA48N20T Datasheet - Page 5

• Manufacturer Part Number: IXTA48N20T
• Description: MOSFET N-CH 200V 48A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA48N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.05
• Ciss, Typ, (pf): 3090
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 130
• Trr, Max, (ns): -
• Pd, (w): 250
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
32
30
28
26
24
22
20
18
22
20
18
16
14
12
10
32
28
24
20
16
12
8
10
4
25
T
t
T
V
J
r
J
DS
35
= 25ºC
Fig. 17. Resistive Turn-off Switching Times
15
= 125ºC, V
Fig. 15. Resistive Turn-on Switching Times
6
= 100V
T
Fig. 13. Resistive Turn-on Rise Time
45
J
20
= 125ºC
t
8
d(on)
GS
I
D
= 15V
= 24A
55
vs. Junction Temperature
- - - -
vs. Gate Resistance
vs. Drain Current
25
10
T
J
R
I
I
- Degrees Centigrade
D
G
D
65
t
R
V
- Amperes
= 48A
- Ohms
f
DS
G
= 5Ω, V
30
= 100V
12
T
75
I
J
D
= 125ºC
= 48A
t
d(off)
GS
35
14
= 15V
85
- - - -
T
J
R
V
= 25ºC
40
95
16
DS
G
= 5Ω , V
= 100V
I
D
105
= 24A
45
18
GS
= 15V
115
50
20
68
64
60
56
52
48
44
40
22
21
20
19
18
17
16
125
38
36
34
32
30
28
26
24
22
20
18
66
58
50
42
34
26
18
34
30
26
22
18
14
10
6
25
4
10
R
V
35
Fig. 18. Resistive Turn-off Switching Times
t
T
V
G
DS
Fig. 16. Resistive Turn-off Switching Times
f
J
DS
6
t
R
V
= 5Ω , V
= 125ºC, V
15
= 100V
f
G
DS
= 100V
= 5Ω, V
= 100V
45
Fig. 14. Resistive Turn-on Rise Time
GS
8
20
t
vs. Junction Temperature
t
= 15V
d(off)
GS
GS
d(off)
55
T
IXTA48N20T IXTP48N20T
J
vs. Gate Resistance
= 15V
= 15V
- Degrees Centigrade
- - - -
- - - -
10
I
D
R
65
= 24A
25
G
vs. Drain Current
I
D
- Ohms
- Amperes
12
75
I
D
30
= 24A
85
14
35
T
T
I
J
95
J
D
= 25ºC
= 125ºC
= 48A
16
IXTQ48N20T
105
I
40
D
= 48A
18
IXYS REF: T_48N20T(4W)02-12-10-A
115
45
20
125
160
140
120
100
80
60
40
62
60
58
56
54
52
50
48
46
44
42
50