IXTA48N20T IXYS, IXTA48N20T Datasheet - Page 2

• Manufacturer Part Number: IXTA48N20T
• Description: MOSFET N-CH 200V 48A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA48N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.05
• Ciss, Typ, (pf): 3090
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 130
• Trr, Max, (ns): -
• Pd, (w): 250
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1.
TO-263 (IXTA) Outline
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
V
Repetitive, Pulse Width Limited by T
V
V
V
I
Test Conditions
Resistive Switching Times
V
R
TO-220
TO-3P
Test Conditions
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 48A, V
= 0.5 • I
= 0.5 • V
= 10V, I
= 0V, V
= 0V
= 10V, V
= 10V, V
= 10Ω(External)
D25
GS
DS
D
DSS
, V
DS
DS
= 0.5 • I
= 0V, Note 1
= 25V, f = 1MHz
1. Gate
2. Collector
3. Emitter
4. Collector
GS
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
Bottom Side
= 0V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
Dim.
5,049,961
5,063,307
5,187,117
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
JM
D25
D25
14.61
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Min.
Millimeter
0
5,237,481
5,381,025
5,486,715
10.41
15.88
26
Min.
Min.
Characteristic Values
Characteristic Values
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
0.13
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
Min.
6,162,665
6,259,123 B1
6,306,728 B1
3090
Typ.
Typ.
Inches
0
0.50
0.25
350
130
550
8.5
44
40
20
46
60
18
13
26
28
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.005
Max.
Max.
0.50 °C/W
192
48
1.2
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
A
V
IXTA48N20T IXTP48N20T
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
IXTQ48N20T
2 - Drain
7,157,338B2