IRF7759L2TR1PBF International Rectifier, IRF7759L2TR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7759L2TR1PBF
• Description: MOSFET N-CH 75V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7759L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 12222pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7759L2TR1PBFTR

Fig 10. Typical Source-Drain Diode Forward Voltage
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Fig 12. Maximum Drain Current vs. Case Temperature
1000
100
0.1
200
160
120
10
80
40
1
0
0.2
25
T J = 175°C
TJ = 25°C
TJ = -40°C
V SD , Source-to-Drain Voltage (V)
50
0.4
T C , Case Temperature (°C)
75
0.6
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
0.8
1200
1000
800
600
400
200
125
0
V GS = 0V
25
1.0
150
Starting T J , Junction Temperature (°C)
50
1.2
175
75
100
TOP
BOTTOM 96A
125
10000
1000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
0.1
10
23.97A
I D
15.39A
1
-75 -50 -25
150
0
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 13. Typical Threshold Voltage vs.
I D = 1.0A
ID = 1.0mA
ID = 250µA
Fig11. Maximum Safe Operating Area
V DS , Drain-to-Source Voltage (V)
175
OPERATION IN THIS AREA LIMITED
BY R DS (on)
T J , Temperature ( °C )
Junction Temperature
0
DC
1
25 50 75 100 125 150 175
10msec
1msec
10
100µsec
100
5