IRF7759L2TR1PBF International Rectifier, IRF7759L2TR1PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7759L2TR1PBF
• Description: MOSFET N-CH 75V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7759L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 12222pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7759L2TR1PBFTR

ƒ
„
ˆ
ƒ Surface mounted on 1 in. square Cu
board (still air).
P
P
P
T
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
Notes:
www.irf.com
D
D
D
P
J
STG
θJA
θJA
θJA
θJ-Can
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
C
C
A
0.0001
= 25°C
= 25°C
= 100°C
0.001
0.01
0.1
10
1E-006
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
D = 0.50
0.10
0.05
0.20
0.02
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
l
c
e
j
k
Parameter
Parameter
0.0001
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
‰
Š
0.001
i/Ri
back and with small clip heatsink.
Mounted on minimum footprint full size board with metalized
R
R
1
R
θ
1
is measured at
τ
2
τ
R
2
2
R
2
R
τ
3
3
R
τ
3
0.01
3
T
J
of approximately 90°C.
τ
Typ.
12.5
R
4
–––
–––
–––
20
τ
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
4
4
τ
C
τ
-55 to + 175
Ri (°C/W)
0.10804
0.61403
0.45202
0.00001
Max.
125
270
3.3
63
0.1
„
Max.
–––
–––
1.2
0.5
τi (sec)
0.000171
0.053914
0.006099
0.036168
45
1
Units
Units
°C/W
°C
W
3