STP140NF55 STMicroelectronics, STP140NF55 Datasheet - Page 4

• Manufacturer Part Number: STP140NF55
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP140NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 142nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 100 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4370-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
I
I
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
(see Figure 14)
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
= 250 µA, V
= Max rating
= Max rating, T
= V
= ±20V
= 10 V, I
= 15V, I
= 25V, f = 1 MHz
= 0
= 44V, I
=10V
Test conditions
Test conditions
STB140NF55 - STB140NF55-1 - STP140NF55
GS
, I
D
D
D
D
= 40 A
= 80A
GS
= 250µA
= 40 A
= 0
C
= 125 °C
Min.
Min.
55
2
0.0065 0.008
5300
1000
Typ.
Typ.
100
290
142
27
55
3
Max. Unit
±100
Max. Unit
10
1
4
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V
S
Ω