IRF7749L2TRPBF International Rectifier, IRF7749L2TRPBF Datasheet - Page 5
![MOSFET N-CH 60V DIRECTFET L8](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7749L2TRPBF
Manufacturer Part Number
IRF7749L2TRPBF
Description
MOSFET N-CH 60V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7749L2TRPBF.pdf
(11 pages)
Specifications of IRF7749L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 mOhm @ 120A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
12320pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
200 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 10. Typical Source-Drain Diode Forward Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
200
160
120
1000
80
40
100
0
10
1
25
0.2
50
V SD , Source-to-Drain Voltage (V)
0.4
T C , CaseTemperature (°C)
75
0.6
100
0.8
Fig 14. Maximum Avalanche Energy Vs. Drain Current
125
1.0
T J = 175°C
T J = 25°C
T J = -40°C
1200
1000
800
600
400
200
V GS = 0V
0
25
150
1.2
Starting T J , Junction Temperature (°C)
50
1.4
175
75
100
TOP
BOTTOM
125
10000
20A
31A
120A
1000
150
I D
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
100
0.1
10
Fig 13. Typical Threshold Voltage vs.
1
-75 -50 -25
Fig11. Maximum Safe Operating Area
0
175
Tc = 25°C
Tj = 175°C
Single Pulse
V DS , Drain-toSource Voltage (V)
Junction Temperature
T J , Temperature ( °C )
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
1
25
50
10msec
1msec
100μsec
75
10
100 125 150 175
I D = 1.0A
I D = 1.0mA
I D = 250μA
100
5