IRF7749L2TRPBF International Rectifier, IRF7749L2TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7749L2TRPBF
• Description: MOSFET N-CH 60V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7749L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 12320pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ
„
ˆ
P
P
P
T
T
T
R
R
R
R
R
ƒ Surface mounted on 1 in. square Cu
board (still air).
Absolute Maximum Ratings
Thermal Resistance
Notes:
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJ-Can
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
@T
@T
@T
T
C
measured with thermocouple incontact with top (Drain) of part.
C
C
A
= 25°C
= 25°C
= 100°C
0.0001
0.001
0.01
0.1
10
1E-006
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
0.01
0.02
0.20
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
l
c
e
j
k
Parameter
Parameter
0.0001
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
τ
J
τ
J
τ
‰
Š
1
Ci= τi/Ri
τ
1
Ci
back and with small clip heatsink.
0.001
Mounted on minimum footprint full size board with metalized
R
θ
i/Ri
is measured at
R
1
R
1
τ
2
R
τ
2
2
R
2
R
τ
0.01
3
3
R
τ
J
3
3
Typ.
12.5
–––
–––
–––
20
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
τ
4
R
4
-55 to + 175
4
τ
C
Max.
τ
125
270
3.3
Ri (°C/W)
63
0.10804
0.61403
0.45202
0.00001
0.1
„
Max.
–––
–––
1.2
0.5
45
τi (sec)
0.000171
0.053914
0.006099
0.036168
1
Units
Units
°C/W
°C
W
3