IXFH102N15T IXYS, IXFH102N15T Datasheet - Page 4

• Manufacturer Part Number: IXFH102N15T
• Description: MOSFET N-CH 150V 102A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH102N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 455W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 5220
• Qg, Typ, (nc): 87
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
300
275
250
225
200
175
150
125
100
160
140
120
100
100
75
50
25
80
60
40
20
10
0
0
0.4
3.5
0
f
= 1 MHz
0.5
4.0
5
Fig. 9. Forward Voltage Drop of
0.6
4.5
10
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
= 150ºC
0.7
T
Intrinsic Diode
J
5.0
15
= 150ºC
V
- 40ºC
GS
V
V
25ºC
0.8
SD
DS
- Volts
5.5
- Volts
20
- Volts
0.9
6.0
T
25
J
1.0
C iss
C oss
C rss
= 25ºC
6.5
30
1.1
7.0
35
1.2
7.5
1.3
40
1000.0
100.0
10.0
120
110
100
1.0
0.1
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
V
I
I
T
T
Single Pulse
D
G
DS
J
C
10
= 51A
= 10mA
20
= 175ºC
= 25ºC
= 75V
Limit
IXFA102N15T IXFH102N15T
20
40
Fig. 8. Transconductance
T
Fig. 10. Gate Charge
J
10
30
= - 40ºC
Q
60
G
I
- NanoCoulombs
D
V
40
DS
- Amperes
25ºC
80
- Volts
150ºC
50
100
IXFP102N15T
DC
100
60
IXYS REF: F_102N15T(6E)9-30-08
120
25µs
100µs
1ms
10ms
100ms
70
140
80
1000
160
90