IXFH102N15T IXYS, IXFH102N15T Datasheet - Page 3

• Manufacturer Part Number: IXFH102N15T
• Description: MOSFET N-CH 150V 102A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH102N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 455W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 5220
• Qg, Typ, (nc): 87
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
110
100
110
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
0
Fig. 5. R
V
0.4
GS
0.2
= 10V
40
0.8
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
0.4
DS(on)
80
1.2
vs. Drain Current
Normalized to I
0.6
1.6
I
120
V
V
D
@ 150ºC
@ 25ºC
DS
DS
- Amperes
V
V
GS
0.8
2.0
- Volts
- Volts
GS
= 15V
= 15V
160
10V
9V
8V
10V
9V
8V
2.4
1.0
D
2.8
200
= 51A Value
1.2
T
T
J
J
7V
6V
= 175ºC
= 25ºC
3.2
7V
6V
5V
240
1.4
3.6
280
1.6
4.0
300
250
200
150
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
70
60
50
40
30
20
10
50
0
0
-50
-50
0
Fig. 6. Drain Current vs. Case Temperature
V
Fig. 4. R
GS
V
Fig. 2. Extended Output Characteristics
-25
-25
External Lead Current Limit
GS
= 10V
2
= 15V
IXFA102N15T IXFH102N15T
10V
9V
0
0
DS(on)
vs. Junction Temperature
4
7V
6V
8V
T
C
T
25
- Degrees Centigrade
25
J
Normalized to I
- Degrees Centigrade
6
V
DS
50
50
@ 25ºC
- Volts
8
I
D
75
= 102A
75
IXFP102N15T
10
100
100
D
= 51A Value
12
125
125
I
D
= 51A
14
150
150
175
175
16