IRF1404SPBF International Rectifier, IRF1404SPBF Datasheet - Page 7

• Manufacturer Part Number: IRF1404SPBF
• Description: MOSFET N-CH 40V 162A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 162A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7360pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 162 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Gate Charge Qg: 160 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1404SPBF

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
Fig 14. For N-channel
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
HEXFET
D =
-
®
„
Period
P.W.
Power MOSFETs
+
V
V
I
SD
GS
DD
=10V
+
-
7