IRF1404SPBF International Rectifier, IRF1404SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1404SPBF
• Description: MOSFET N-CH 40V 162A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 162A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7360pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 162 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Gate Charge Qg: 160 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1404SPBF

*
Electrical Characteristics @ T
ƒ
„
Notes:

Source-Drain Ratings and Characteristics
‚
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
C
C
C
I
I
V
t
Q
t
DSS
d(on)
r
d(off)
f
SM
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
S
rr
on
For recommended footprint and soldering techniques refer to application note #AN-994.
fs
S
2
(BR)DSS
GS(th)
oss
oss
DS(on)
iss
oss
rss
oss
SD
g
gs
gd
rr
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
I
T
(BR)DSS
max. junction temperature. (See fig. 11)
R
SD
Starting T
J
G
eff.
≤ 175°C
≤ 95A, di/dt ≤ 150A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …‡
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 0.12mH
AS
= 95A. (See Figure 12)
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
…
†
‡
C
junction temperature. Package limitation current is 75A
Use IRF1404 data and test conditions.
Calculated continuous current based on maximum allowable
as C
–––
––– 0.00350.004
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
oss
40
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
0.036 –––
7360 –––
1680 –––
6630 –––
1490 –––
1540 –––
while V
–––
–––
–––
–––
–––
–––
––– -200
160
140
240
–––
–––
–––
180
7.5
35
42
17
72
26
71
162†
–––
–––
–––
250
200
200
–––
–––
–––
–––
–––
–––
110
270
4.0
1.3
20
60
DS
650
is rising from 0 to 80% V
V/°C
nH
µA
nA
nC
pF
nC
ns
V
Ω
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5 ‡
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „‡
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
J
J
= 95A
= 95A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0.21Ω „‡
= 10V, I
= 25V, I
= 40V, V
= 32V, V
= 32V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V „‡
= 20V
= 0V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
DS
DS
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 95A, V
= 95A
DSS
= 95A „
= 250µA
= 60A‡
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V to 32V
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V „
G
S
+L
D
S
D
)