IRL8113PBF International Rectifier, IRL8113PBF Datasheet - Page 4

• Manufacturer Part Number: IRL8113PBF
• Description: MOSFET N-CH 30V 105A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL8113PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2840pF @ 15V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 105A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.25V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 110 W
• Mounting Style: Through Hole
• Gate Charge Qg: 23 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL8113PBF

4
100000
1000.0
10000
100.0
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-to-Drain Voltage (V)
0.5
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
1.0
Ciss
Crss
Coss
1.5
f = 1 MHZ
10
2.0
V GS = 0V
2.5
3.0
100
10000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
12
10
10
8
6
4
2
0
1
0.1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 17A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
1.0
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
VDS= 15V
30
10.0
40
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100µsec
50
10msec
1msec
100.0
60