STP15NK50Z STMicroelectronics, STP15NK50Z Datasheet - Page 4

• Manufacturer Part Number: STP15NK50Z
• Description: MOSFET N-CH 500V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP15NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 340 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 106nC @ 10V
• Input Capacitance (ciss) @ Vds: 2260pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.34 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical ratings STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z
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Table 2.
1. When mounted on minimum foot-print
Table 3.
Table 4.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
R
GSO
thj-a
T
E
I
AR
l
AS
(1)
Gate-source breakdown voltage
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Thermal data
Avalanche characteristics
Gate-source zener diode
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=I
Parameter
Parameter
AR
, V
DD
=50V)
Igs=±1mA
(Open Drain)
Test conditions
62.5
300
Min.
30
Value
300
Typ.
14
50
Max.
°C/W
Unit
Unit
mJ
°C
A
V