STF9NK90Z STMicroelectronics, STF9NK90Z Datasheet - Page 5
STF9NK90Z
Manufacturer Part Number
STF9NK90Z
Description
MOSFET N-CH 900V 8A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STW9NK90Z.pdf
(17 pages)
Specifications of STF9NK90Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.3 Ohm @ 3.6A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
2115pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF9NK90Z
Manufacturer:
IXYS
Quantity:
3 000
Part Number:
STF9NK90Z
Manufacturer:
ST
Quantity:
20 000
Part Number:
STF9NK90Z,S
Manufacturer:
ST
Quantity:
20 000
Part Number:
STF9NK90ZFP
Manufacturer:
ST
Quantity:
20 000
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
BV
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
GSO
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise Time
Turn-off delay time
Fall time
Gate-source breakdown voltage I
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 9479 Rev 7
V
R
Figure 19
Figure 24
GS
I
I
di/dt = 100 A/µs,
V
Figure 21
DD
SD
SD
G
DD
= 4.7 Ω, V
= ±1 mA(open drain)
Test conditions
Test conditions
Test conditions
= 8 A, V
= 8 A,
= 450 V, I
= 50 V, Tj = 150 °C
GS
GS
D
=0
= 4 A,
= 10 V
Electrical characteristics
Min.
Min.
Min
30
-
-
-
-
-
Typ.
Typ.
950
Typ.
10
21
22
13
55
28
-
Max
Max.
Max.
1.6
32
8
-
-
Unit
Unit
Unit
µC
ns
ns
ns
ns
ns
A
A
V
A
V
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