STB80PF55T4 STMicroelectronics, STB80PF55T4 Datasheet - Page 10
STB80PF55T4
Manufacturer Part Number
STB80PF55T4
Description
MOSFET P-CH 55V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB80PF55T4.pdf
(16 pages)
Specifications of STB80PF55T4
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
258nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Forward Transconductance Gfs (max / Min)
32 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6559-2
STB80PF55T4
STB80PF55T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB80PF55T4
Manufacturer:
LT
Quantity:
4 500
Part Number:
STB80PF55T4
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
10/16
Table 8.
Dim
D1
A1
E1
V2
b2
c2
e1
J1
L1
L2
D
H
R
A
E
b
c
e
L
D
2
PAK mechanical data
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
10
15
0°
Doc ID 8177 Rev 6
Typ.
2.54
mm
0.4
10.40
15.85
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
Min.
0.05
0°
STB80PF55, STP80PF55
0.016
inch
Typ.
0.1
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max.
8°