IRF1310NPBF International Rectifier, IRF1310NPBF Datasheet - Page 5
![MOSFET N-CH 100V 42A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF1310NPBF
Manufacturer Part Number
IRF1310NPBF
Description
MOSFET N-CH 100V 42A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF1310NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
42 A
Gate Charge, Total
110 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
160 W
Resistance, Drain To Source On
0.036 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
14 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
42 A
Mounting Style
Through Hole
Gate Charge Qg
73.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1310NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1310NPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
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