IRF1310NPBF International Rectifier, IRF1310NPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1310NPBF
• Description: MOSFET N-CH 100V 42A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1310NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 42 A
• Gate Charge, Total: 110 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 160 W
• Resistance, Drain To Source On: 0.036 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 14 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 42 A
• Mounting Style: Through Hole
• Gate Charge Qg: 73.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1310NPBF

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