STB100NF03L-03T4 STMicroelectronics, STB100NF03L-03T4 Datasheet - Page 7

• Manufacturer Part Number: STB100NF03L-03T4
• Description: MOSFET N-CH 30V 100A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB100NF03L-03T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 5V
• Input Capacitance (ciss) @ Vds: 6200pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0032 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7929-2; STB100NF03L-03T4

STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Figure 12. Normalized B
Capacitance variations
temperature
Electrical characteristics
VDSS
vs temperature
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