IXTP3N100D2 IXYS, IXTP3N100D2 Datasheet - Page 4

• Manufacturer Part Number: IXTP3N100D2
• Description: MOSFET N-CH 1000V 3A TO220AB
• Manufacturer: IXYS

Specifications of IXTP3N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 37.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Vds, Max, (v): 1000
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 5.5
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 1020
• Crss, Typ, (pf): 17
• Qg, Typ, (nc): 37.5
• Pd, (w): 125
• Rthjc, Max, (ºc/w): 1
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.3
1.2
1.1
1.0
0.9
0.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-4.0
-50
-50
Fig. 7. Normalized R
V
I
V
D
GS
DS
= 1.5A
= 0V
-3.5
-25
-25
= 30V
Fig. 11. Breakdown and Threshold Voltages
-3.0
0
0
vs. Junction Temperature
Fig. 9. Input Admittance
T
T
J
J
- Degrees Centigrade
- Degrees Centigrade
-2.5
25
25
V
DS(on)
GS
- Volts
-2.0
50
50
T
vs. Junction Temperature
J
= 125ºC
- 40ºC
25ºC
V
-1.5
GS(off)
75
75
@ V
BV
-1.0
100
100
DSX
DS
= 25V
@ V
GS
-0.5
125
125
= - 5V
150
150
0.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
9
8
7
6
5
4
3
2
1
0
0.0
0.3
0
V
V
GS
0.5
0.5
DS
= -10V
= 30V
0.4
Fig. 8. R
1
1.0
T
T
Fig. 12. Forward Voltage Drop of
J
J
1.5
= 125ºC
= 25ºC
0.5
DS(on)
Fig. 10. Transconductance
1.5
vs. Drain Current
2
Normalized to I
I
2.0
I
Intrinsic Diode
T
D
D
V
J
- Amperes
0.6
- Amperes
SD
= 125ºC
T
J
2.5
= - 40ºC
- Volts
2.5
25ºC
125ºC
3
0.7
3.0
3.5
IXTA3N100D2
IXTP3N100D2
D
= 1.5A Value
3.5
0.8
4
V
GS
T
4.0
J
= 0V
4.5
= 25ºC
5V
0.9
- - - -
4.5
5
5.0
5.5
1.0