IXTP3N100D2 IXYS, IXTP3N100D2 Datasheet - Page 3

• Manufacturer Part Number: IXTP3N100D2
• Description: MOSFET N-CH 1000V 3A TO220AB
• Manufacturer: IXYS

Specifications of IXTP3N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 37.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Vds, Max, (v): 1000
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 5.5
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 1020
• Crss, Typ, (pf): 17
• Qg, Typ, (nc): 37.5
• Pd, (w): 125
• Rthjc, Max, (ºc/w): 1
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2011 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0
0
100
Fig. 3. Output Characteristics @ T
2
Fig. 1. Output Characteristics @ T
5
200
Fig. 5. Drain Current @ T
300
4
10
400
V
V
500
DS
DS
6
V
- Volts
- Volts
DS
15
600
- Volts
8
700
V
V
GS
GS
= 5V
= 5V
- 2V
- 3V
-1V
2V
1V
0V
800
20
1V
0V
J
= 100ºC
- 2V
- 3V
-1V
10
J
900 1000 1100 1200
J
= 125ºC
= 25ºC
V
GS
25
= - 3.25V
12
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
14
30
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
7
6
5
4
3
2
1
0
-4.6
0
0
Fig. 2. Extended Output Characteristics @ T
100
-4.4
Fig. 6. Dynamic Resistance vs. Gate Voltage
200
10
-4.2
Fig. 4. Drain Current @ T
300
-4.0
400
T
20
J
V
500
= 100ºC
DS
-3.8
V
V
DS
GS
- Volts
600
V
- Volts
- Volts
GS
T
-3.6
J
= 5V
= 25ºC
700
2V
1V
30
IXTP3N100D2
IXTA3N100D2
-1V
- 2V
0V
800
-3.4
J
= 25ºC
∆
V
900
DS
-3.2
= 700V - 100V
V
40
GS
1000 1100 1200
J
= - 3.00V
= 25ºC
- 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
-3.0
-2.8
50