IXTA8N50P IXYS, IXTA8N50P Datasheet - Page 4

MOSFET N-CH 500V 8A D2-PAK

IXTA8N50P

Manufacturer Part Number
IXTA8N50P
Description
MOSFET N-CH 500V 8A D2-PAK
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTA8N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5.5V @ 100µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Forward Transconductance Gfs (max / Min)
8 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
8.0
Rds(on), Max, Tj=25°c, (?)
0.8
Ciss, Typ, (pf)
1050
Qg, Typ, (nc)
20
Trr, Typ, (ns)
400
Pd, (w)
150
Rthjc, Max, (k/w)
0.83
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA8N50P
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
24
20
16
12
10
14
12
10
8
4
0
8
6
4
2
0
0.4
3.5
0
f = 1MH z
5
4
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Curr e nt vs .
Sour ce -To-Drain V oltage
10
T
4.5
J
= 125
0.6
T
J
V
15
V
V
= 125
S D
G S
º
D S
-40
5
C
25
- V olts
- V olts
0.7
20
º
º
- V olts
º
C
C
C
5.5
25
0.8
6
30
T
J
C iss
C oss
C rss
= 25
0.9
6.5
35
º
C
40
1
7
100
0.1
10
10
14
12
10
1
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
10
0
0
T
T
T
V
I
I
J
D
G
J
C
2
R
DS
= -40
125
= 4A
= 10m A
= 150ºC
DS(on)
= 25ºC
Fig. 8. Trans conductance
25
2
= 250V
4
º
º
º
C
C
Fig. 10. Gate Charge
C
Fig. 12. Forw ard-Bias
Safe Ope r ating Ar e a
Lim it
6
Q
4
G
I
8
- nanoCoulombs
V
D
D S
- A mperes
6
D C
10
100
- V olts
12
8
14
IXTP 8N50P
IXTA 8N50P
10
16
18
12
100µs
25µs
1m s
10m s
20
1000
14
22

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