IXTA8N50P IXYS, IXTA8N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTA8N50P
Manufacturer Part Number
IXTA8N50P
Description
MOSFET N-CH 500V 8A D2-PAK
Specifications of IXTA8N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5.5V @ 100µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Forward Transconductance Gfs (max / Min)
8 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
8.0
Rds(on), Max, Tj=25°c, (?)
0.8
Ciss, Typ, (pf)
1050
Qg, Typ, (nc)
20
Trr, Typ, (ns)
400
Pd, (w)
150
Rthjc, Max, (k/w)
0.83
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Transient
Test Conditions
T
T
Continuous
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 100µA
= 250 µA
, V
G
= 0.5 I
= 18 Ω
DS
= 0
D25
(TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTA 8N50P
IXTP 8N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
400
150
150
300
260
±40
14
20
10
8
8
4
3
±100
Max.
5.5
0.8
50
5
V/ns
mJ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-263 (IXTA)
TO-220 (IXTP)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
DSS
G = Gate
S = Source
G
D
G
≤ ≤ ≤ ≤ ≤ 0.8
= 500
=
S
S
D = Drain
TAB = Drain
8
DS99321E(03/06)
(TAB)
(TAB)
A
V
Ω Ω Ω Ω Ω
Related parts for IXTA8N50P
IXTA8N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 8N50P IXTP 8N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 400 ≤ DSS 150 -55 ... +150 150 -55 ... +150 300 260 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ =0V, V =100V -di/dt = 100 A/µs IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ. ...
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved º º C 3.1 2 2.5 2.2 6V 1.9 1.6 1.3 0 º 125 C J º ...
... G S Fig. 9. Source Curr Sour ce -To-Drain V oltage º 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 º 0.8 0.9 1 100 C iss 10 C oss ...
... IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.01 0.1 Pulse Width - Seconds IXTA 8N50P IXTP 8N50P 1 10 IXYS REF: T_8N50P (37) 03-21-06-A.XLS ...
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