IRF540ZLPBF International Rectifier, IRF540ZLPBF Datasheet - Page 8

• Manufacturer Part Number: IRF540ZLPBF
• Description: MOSFET N-CH 100V 36A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 92 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 39 ns
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 51 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540ZLPBF

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Fig 17.
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-
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Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
„
G
HEXFET
t
d(on)
+
t
r
®
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Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
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Period
P.W.
V
V
I
SD
GS
DD
=10V