IRF540ZLPBF International Rectifier, IRF540ZLPBF Datasheet

MOSFET N-CH 100V 36A TO-262

IRF540ZLPBF

Manufacturer Part Number
IRF540ZLPBF
Description
MOSFET N-CH 100V 36A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF540ZSTRRPBF.pdf (12 pages)

Specifications of IRF540ZLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
26.5 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Power Dissipation
92 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
39 ns
Gate Charge Qg
42 nC
Minimum Operating Temperature
- 55 C
Rise Time
51 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540ZLPBF
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Features
Description
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
CS
JA
JA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Ã
Parameter
Parameter
i
GS
GS
g
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
IRF540ZPbF
h
TO-220AB
G
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
IRF540ZSPbF
D
S
-55 to + 175
D
y
Max.
in (1.1N
2
0.61
± 20
140
120
36
25
92
83
Pak
®
R
IRF540ZSPbF
IRF540ZLPbF
DS(on)
Power MOSFET
V
IRF540ZPbF
y
m)
DSS
Max.
1.64
I
–––
62
40
D
= 36A
IRF540ZLPbF
PD - 95531A
= 26.5m
= 100V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF540ZLPBF Summary of contents

Page 1

... Parameter 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF ® HEXFET Power MOSFET 100V DSS R = 26.5m DS(on 36A Pak TO-262 IRF540ZSPbF IRF540ZLPbF Max. Units 140 92 W 0.61 W/°C ± 120 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. Units – ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2500 C oss = 2000 Ciss 1500 1000 500 ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse 90 BOTTOM 10% Duty Cycle 20A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package is ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS SE MBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" OR Notes: 1. ...

Page 12

D Pak Tape & Reel Infomation TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  ...

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