IRFI4229PBF International Rectifier, IRFI4229PBF Datasheet - Page 8

• Manufacturer Part Number: IRFI4229PBF
• Description: MOSFET N-CH 250V 19A TO-220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 25V
• Power - Max: 46W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 46 W
• Mounting Style: Through Hole
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Notes:
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Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
Half sine wave with duty cycle = 0.25, ton=1µsec.
8
Starting T
θ
is measured at
J
= 25°C, L = 1.9mH, R
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
J
G
= 25Ω, I
AS
= 11A.
This product has been designed and qualified for the Industrial market.
Visit us at www.irf.com for sales contact information. 03/08
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
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TAC Fax: [phone]
www.irf.com