IRFI4229PBF International Rectifier, IRFI4229PBF Datasheet - Page 5

• Manufacturer Part Number: IRFI4229PBF
• Description: MOSFET N-CH 250V 19A TO-220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 25V
• Power - Max: 46W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 46 W
• Mounting Style: Through Hole
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Threshold Voltage vs. Temperature
Fig 13. On-Resistance vs. Gate Voltage
200
180
160
140
120
100
5.0
4.0
3.0
2.0
0.0001
80
60
40
20
0.001
0
0.01
-75 -50 -25
0.1
5
10
1
1E-006
V GS, Gate -to -Source Voltage (V)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
6
I D = 250µA
0.01
0.02
0.05
0.10
T J , Temperature ( °C )
0.20
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0
7
25
T J = 25°C
50
T J = 125°C
8
0.0001
75 100 125 150
I D = 11A
9
t 1 , Rectangular Pulse Duration (sec)
0.001
10
0.01
Fig 14. Maximum Avalanche Energy vs. Temperature
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
Fig 16. Typical Repetitive peak Current vs.
450
400
350
300
250
200
150
100
i/Ri
R
50
60
50
40
30
20
10
1
R
0
0
1
25
25
0.1
τ
2
τ
R
2
Starting T J , Junction Temperature (°C)
2
R
2
50
50
Case temperature
R
τ
3
3
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Case Temperature (°C)
3
3
τ
1
C
τ
Ri (°C/W)
75
75
0.3671
1.0580
1.3076
ton= 1µs
Duty cycle = 0.25
100
100
10
TOP
BOTTOM 11A
Half Sine Wave
Square Pulse
0.000287
0.162897
2.426
τi (sec)
125
125
I D
2.3A
2.7A
100
150
150
5