IRF1405STRRPBF International Rectifier, IRF1405STRRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF1405STRRPBF
• Description: MOSFET N-CH 55V 131A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 131A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 5480pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 131A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 5.3 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 131 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 110 ns
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 190 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
I
AS
12V
V
V
G
GS
R G
20V
Same Type as D.U.T.
V DS
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
.3µF
D.U.T
0.01 Ω
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
- V DD
A
Fig 14. Threshold Voltage Vs. Temperature
1400
1200
1000
800
600
400
200
4.0
3.5
3.0
2.5
2.0
1.5
0
25
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
T J , Temperature ( °C )
J
0
75
25
100
50
75
125
TOP
BOTTOM
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100 125 150 175
I D = 250µA
150
101A
°
I D
41A
71A
175