IRF1405STRRPBF International Rectifier, IRF1405STRRPBF Datasheet - Page 11

MOSFET N-CH 55V 131A D2PAK

IRF1405STRRPBF

Manufacturer Part Number
IRF1405STRRPBF
Description
MOSFET N-CH 55V 131A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF1405STRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 101A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
131A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
5480pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
131A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
5.3mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
5.3 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
131 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
110 ns
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Rise Time
190 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

ƒ
ˆ
www.irf.com
Dimensions are shown in millimeters (inches)
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
For recommended footprint and soldering techniques refer to application note #AN-994.
2
This is applied to D
Repetitive rating; pulse width limited by
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
T
R
max. junction temperature. (See fig. 11).
Starting T
SD
J
G
≤ 175°C
≤ 101A, di/dt ≤ 210A/µs, V
= 25Ω, I
J
= 25°C, L = 0.11mH
AS
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
= 101A. (See Figure 12).
TRR
TRL
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
DD
10.90 (.429)
10.70 (.421)
≤ V
13.50 (.532)
12.80 (.504)
(BR)DSS
This product has been designed and qualified for the industrial market.
4.10 (.161)
3.90 (.153)
,
1.60 (.063)
1.50 (.059)
Visit us at www.irf.com for sales contact information.07/2010
C
as C
Data and specifications subject to change without notice.
Calculated continuous current based on maximum allowable
Limited by T
oss
junction temperature. Package limitation current is 75A.
16.10 (.634)
15.90 (.626)
avalanche performance.
Qualification Standards can be found on IR’s Web site.
oss
eff. is a fixed capacitance that gives the same charging time
11.60 (.457)
11.40 (.449)
while V
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
Jmax
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
DS
15.42 (.609)
15.22 (.601)
4
is rising from 0 to 80% V
3
, see Fig.12a, 12b, 15, 16 for typical repetitive
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
TAC Fax: (310) 252-7903
DSS
.
11

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