IXTP50N20P IXYS, IXTP50N20P Datasheet - Page 4

• Manufacturer Part Number: IXTP50N20P
• Description: MOSFET N-CH 200V 50A TO-220
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTP50N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2720pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 2720
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): 150
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
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f = 1MHz
5
T
5
J
T
Fig. 11. Capacitance
= 150ºC
J
Fig. 7. Input Admittance
Fig. 9. Source Current vs.
= 150ºC
Source-To-Drain Voltage
10
- 40ºC
25ºC
6
V
15
V
V
G S
S D
D S
- Volts
- Volts
20
- Volts
7
T
J
= 25ºC
25
8
C
C
C
30
iss
oss
rss
9
35
40
1 0
1000
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28
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10
0
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R
V
I
I
D
G
10
DS
DS(ON)
= 25A
= 10mA
10
= 100V
20
Fig. 8. Transconductance
T
Limit
J
IXTA50N20P IXTP50N20P
30
Fig. 10. Gate Charge
= - 40ºC
DC
Fig. 12. Forward-Bias
Safe Operating Area
20
Q
40
G
I
- nanoCoulombs
V
D
25ºC
50
30
D S
- Amperes
150ºC
100
60
- Volts
40
70
80
IXTQ50N20P
100µs
10ms
25µs
1m s
50
T
T
Single Puls e
90 100 110 120
J
C
= 175ºC
= 25ºC
60
1000
70