IXTP50N20P IXYS, IXTP50N20P Datasheet

MOSFET N-CH 200V 50A TO-220

IXTP50N20P

Manufacturer Part Number
IXTP50N20P
Description
MOSFET N-CH 200V 50A TO-220
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTP50N20P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2720pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.06
Ciss, Typ, (pf)
2720
Qg, Typ, (nc)
70
Trr, Typ, (ns)
150
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP50N20P
Manufacturer:
IPS
Quantity:
6 000
Part Number:
IXTP50N20P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXTP50N20PM
Manufacturer:
IXYS
Quantity:
18 000
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
TO-3P
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-3P,TO-220)
D25
J
GS
≤ 175°C
, Note 1
= 1MΩ
T
J
JM
= 150°C
IXTA50N20P
IXTP50N20P
IXTQ50N20P
- 55 ... +175
- 55 ... +175
Maximum Ratings
Characteristic Values
200
Min.
2.5
1.13/10
200
200
±20
±30
120
360
175
300
260
2.5
3.0
5.5
50
50
10
Typ.
1
±100 nA
Nm/lb.in.
250 μA
Max.
5.0
25 μA
60 mΩ
V/ns
°C
°C
°C
°C
°C
W
g
V
V
V
V
A
A
A
V
V
g
g
J
TO-3P (IXTQ)
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
Features
• International standard packages
• Unclamped Inductive Switching (UIS)
• Low package inductance
Advantages
• Easy to mount
• Space savings
• High power density
D25
rated
- easy to drive and to protect
G
DS(on)
DSS
D
S
G
≤ ≤ ≤ ≤ ≤
=
=
D
G
S
D
TAB = Drain
S
60mΩ Ω Ω Ω Ω
200V
50A
= Drain
DS99156F(07/08)
(TAB)
(TAB)
(TAB)

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IXTP50N20P Summary of contents

Page 1

... D = ±20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA50N20P IXTP50N20P IXTQ50N20P Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 50 120 ≤ 175° 360 - 55 ... +175 175 - 55 ... +175 300 260 1.13/10 2.5 3.0 5.5 Characteristic Values Min ...

Page 2

... I 17 DSS D D25 37 0.21 0.25 Characteristic Values Min. Typ. JM 150 2.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA50N20P IXTP50N20P TO-3P (IXTQ) Outline Max 0.42 °C/W °C/W °C/W Max TO-220 (IXTP) Outline 120 A 1 μC ...

Page 3

... Amperes D © 2008 IXYS CORPORATION, All rights reserved º 2.0 2.4 2.8 3.2 3.6 º Volts = 25A Value 125º 25º 100 IXTA50N20P IXTP50N20P Fig. 2. Extended Output Characteristics º 100 V = 10V Volts D S Fig Normalized to I DS(on ) vs. Junction Temperature 3.2 3.0 ...

Page 4

... V - Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz IXYS reserves the right to change limits, test conditions, and dimensions 25º iss C oss C rss Volts IXTA50N20P IXTP50N20P Fig. 8. Transconductance 40º 25ºC 20 150º Amperes D Fig. 10. Gate Charge 100V ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 1 10 Pulse Width - milliseconds IXTA50N20P IXTP50N20P IXTQ50N20P 100 IXYS REF: T_50N20P(5S)7-31-08-F 1000 ...

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