IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 7

• Manufacturer Part Number: IRF4905SPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4905SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -70 A
• Gate Charge, Total: 120 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 0.020 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 96 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 99 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
100
0.1
10
160
120
1
1.0E-06
80
40
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
0.01
0.05
0.10
50
Vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = -42A
1.0E-05
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Single Pulse
100
125
1.0E-04
150
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
t
D = Duty cycle in avalanche = t
Z
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
1.0E-03
P
) = Transient thermal resistance, see figure 11)
D (ave)
Allowed avalanche Current vs
avalanche
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
pulsewidth,
1.0E-02
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is