IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 6
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IRF4905SPBF
Manufacturer Part Number
IRF4905SPBF
Description
MOSFET P-CH 55V 42A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF4905SPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
P
Current, Drain
-70 A
Gate Charge, Total
120 nC
Package Type
D2Pak
Polarization
P-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.020 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
20 m Ohms
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 74 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
96 ns
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Rise Time
99 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF4905SPBF
Manufacturer:
IR
Quantity:
21 000
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
V
12V
G
V
I
GS
R
AS
-20V
G
V DS
Same Type as D.U.T.
Q
Current Regulator
GS
.2µF
t p
50KΩ
-3mA
Current Sampling Resistors
I AS
D.U.T
.3µF
Charge
Q
t p
Q
0.01 Ω
L
GD
I
G
G
D.U.T.
V
I
DRIVER
D
(BR)DSS
+
-
V
DS
15V
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
600
500
400
300
200
100
3.6
3.2
2.8
2.4
2.0
0
Fig 12c. Maximum Avalanche Energy
-75
25
-50
Starting T J , Junction Temperature (°C)
50
-25
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
TOP
BOTTOM
www.irf.com
75
I D = -250µA
100 125
125
-30A
-17A
-42A
I D
150
150