IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF4905SPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4905SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -70 A
• Gate Charge, Total: 120 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 0.020 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 96 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 99 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Notes:
2
from 0 to 80% V
Repetitive rating; pulse width limited by
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
R
recommended for use above this value.
same charging time as C
max. junction temperature. (See fig. 11).
Limited by T
oss
G
= 25Ω, I
eff. is a fixed capacitance that gives the
AS
Jmax
= -42A, V
DSS
, starting T
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
.
TRR
TRL
GS
oss
=-10V. Part not
J
while V
330.00
(14.173)
= 25°C, L = 0.16mH
MAX.
1.85 (.073)
1.65 (.065)
DS
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
This product has been designed and qualified for the Industrial market.
is rising
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
…
†
‡
ˆ
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
This is applied to D
Data and specifications subject to change without notice.
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
avalanche performance.
θ
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
Jmax
15.42 (.609)
15.22 (.601)
4
3
, see Fig.12a, 12b, 15, 16 for typical repetitive
2
Pak, when mounted on 1" square PCB (FR-
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
11