IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 2
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IRF4905SPBF
Manufacturer Part Number
IRF4905SPBF
Description
MOSFET P-CH 55V 42A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF4905SPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
P
Current, Drain
-70 A
Gate Charge, Total
120 nC
Package Type
D2Pak
Polarization
P-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.020 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
20 m Ohms
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 74 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
96 ns
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 55 C
Rise Time
99 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF4905SPBF
Manufacturer:
IR
Quantity:
21 000
Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
C
C
C
Source-Drain Ratings and Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
S
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
19
-0.054
3500
1250
4620
1530
–––
–––
–––
–––
–––
–––
–––
–––
120
450
940
–––
–––
–––
150
7.5
32
53
20
99
51
64
61
-200
-100
-280
-4.0
-1.3
–––
–––
–––
100
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
-25
-42
20
92
V/°C
mΩ
µA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= -42A
= -42A
= 25°C, I
= 25°C, I
= 2.6 Ω
= V
= -25V, I
= -55V, V
= -44V, V
= -44V
= -25V
= 0V, I
= -10V, I
= -20V
= 20V
= -10V
= -28V
= -10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
e
e
D
DS
S
F
DS
DS
= -250µA
D
D
= -250µA
= -42A, V
GS
GS
= -42A, V
= -42A
= 0V to -44V
= -42A
= -1.0V, ƒ = 1.0MHz
= -44V, ƒ = 1.0MHz
e
= 0V
= 0V, T
D
e
= -1mA
GS
DD
J
= 125°C
= -28V
= 0V
f
e