IXTP50N25T IXYS, IXTP50N25T Datasheet - Page 4

• Manufacturer Part Number: IXTP50N25T
• Description: MOSFET N-CH 250V 50A TO-220
• Manufacturer: IXYS

Specifications of IXTP50N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): 166
• Trr, Max, (ns): -
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
0
Fig. 5. R
0.2
V
0.5
GS
20
= 10V
0.4
Fig. 1. Output Characteristics
1
Fig. 3. Output Characteristics
DS(on)
0.6
40
1.5
vs. Drain Current
Normalized to I
0.8
I
V
D
V
2
DS
DS
- Amperes
60
@ 25ºC
@ 125ºC
1
- Volts
- Volts
2.5
1.2
V
V
GS
GS
80
= 10V
3
= 10V
1.4
6V
5V
6V
5V
7V
8V
7V
D
3.5
T
= 25A Value
100
1.6
J
= 125ºC
1.8
4
T
J
120
= 25ºC
4.5
2
2.2
140
5
160
140
120
100
3.2
2.8
2.4
1.6
1.2
0.8
0.4
80
60
40
20
55
50
45
40
35
30
25
20
15
10
0
2
5
0
-50
-50
0
Fig. 4. R
Fig. 2. Extended Output Characteristics
V
-25
-25
GS
Fig. 6. Maximum Drain Current vs.
4
= 10V
V
GS
DS(on)
vs. Junction Temperature
0
0
= 10V
IXTP50N25T IXTQ50N25T
IXTA50N25T IXTH50N25T
T
T
8
C
6V
5V
J
7V
Case Temperature
8V
- Degrees Centigrade
- Degrees Centigrade
Normalized to I
25
25
V
DS
12
@ 25ºC
- Volts
50
50
I
16
D
= 50A
75
75
D
20
= 25A Value
100
100
I
D
= 25A
24
125
125
150
150
28