IXTP50N25T IXYS, IXTP50N25T Datasheet - Page 2

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IXTP50N25T

Manufacturer Part Number
IXTP50N25T
Description
MOSFET N-CH 250V 50A TO-220
Manufacturer
IXYS
Datasheet

Specifications of IXTP50N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.06
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
78
Trr, Typ, (ns)
166
Trr, Max, (ns)
-
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP50N25T
Manufacturer:
NXP
Quantity:
12 000
Part Number:
IXTP50N25T
0
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Notes: 1:
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
(T
(T
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
TO-3P, TO-247
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
GS
R
DS
GS
G
GS
GS
= 25A, -di/dt = 250A/μs
= I
= 3.3Ω (External)
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 10V, V
= 0V, V
= 0V
= 15V, V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
GS
DS
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
35
Characteristic Values
Characteristic Values
4000
166
Typ.
Typ.
0.50
0.25
1.9
410
6,162,665
6,259,123 B1
6,306,728 B1
23
60
14
25
47
25
78
19
22
58
200
Max.
Max.
1.5
0.31
50
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTP50N25T IXTQ50N25T
IXTA50N25T IXTH50N25T
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2

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