IRF6648 International Rectifier, IRF6648 Datasheet - Page 6

• Manufacturer Part Number: IRF6648
• Description: MOSFET N-CH 60V 86A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6648

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 29 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF6648
6
Fig 15a. Unclamped Inductive Test Circuit
12V
R G
V
Fig 16a. Switching Time Test Circuit
20V
GS
GS
V DS
Fig 14a. Gate Charge Test Circuit
Same Type as D.U.T.
Current Regulator
t p
.2µF
≤ 0.1 %
≤ 1
I AS
D.U.T
50KΩ
3mA
Current Sampling Resistors
0.01 Ω
L
.3µF
I
G
D.U.T.
15V
I
D
DRIVER
+
-
V
+
-
DS
V DD
+
-
A
90%
V
10%
V
DS
I
AS
Vgs(th)
Fig 15b. Unclamped Inductive Waveforms
GS
Qgs1 Qgs2
Vds
Fig 16b. Switching Time Waveforms
Fig 14b. Gate Charge Waveform
t
d(on)
Qgd
t
r
t p
Qgodr
t
d(off)
V
(BR)DSS
t
f
www.irf.com
Vgs
Id