IRF6648 International Rectifier, IRF6648 Datasheet - Page 7
IRF6648
Manufacturer Part Number
IRF6648
Description
MOSFET N-CH 60V 86A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6648.pdf
(10 pages)
Specifications of IRF6648
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
86A
Vgs(th) (max) @ Id
4.9V @ 150µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2120pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MN
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 m Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
86 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
13 ns
Minimum Operating Temperature
- 40 C
Rise Time
29 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6648LF
Manufacturer:
IR
Quantity:
5 357
Company:
Part Number:
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Manufacturer:
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Company:
Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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DirectFET Substrate and PCB Layout, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
+
-
D.U.T
+
-
•
•
•
•
SD
Fig 17.
•
•
•
-
G
+
HEXFET
D
D
+
-
®
Re-Applied
Voltage
Power MOSFETs
G
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
S
S
P.W.
SD
DS
Waveform
Waveform
D = DRAIN
G = GATE
S = SOURCE
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
IRF6648
=10V
7