STB80NF55-06-1 STMicroelectronics, STB80NF55-06-1 Datasheet - Page 9

• Manufacturer Part Number: STB80NF55-06-1
• Description: MOSFET N-CH 55V 80A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF55-06-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 189nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
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Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
circuit
Test circuit
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