IRF540NPBF International Rectifier, IRF540NPBF Datasheet - Page 3

• Manufacturer Part Number: IRF540NPBF
• Description: MOSFET N-CH 100V 33A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 33 A
• Gate Charge, Total: 71 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 44 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Mounting Style: Through Hole
• Gate Charge Qg: 47.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540NPBF

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
10
1
4.0
0.1
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
1
6.0
°
4.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
7.0
J
DS
T = 175 C
J
10
= 50V
°
8.0
°
9.0
100
1000
Fig 2. Typical Output Characteristics
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
0.1
TOP
BOTTOM
I =
D
33A
V
DS
T , Junction Temperature ( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
IRF540NPbF
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
T = 175 C
J
4.5V
10
°
V
°
GS
=
10V
3
100