IRF540NPBF International Rectifier, IRF540NPBF Datasheet
IRF540NPBF
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IRF540NPBF Summary of contents
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... R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 94812 IRF540NPbF ® HEXFET Power MOSFET 100V DSS R = 44mΩ DS(on 33A D S TO-220AB Max. Units ...
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... IRF540NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Fig 2. Typical Output Characteristics 3 3.0 2.5 2.0 1.5 ° J 1.0 0.5 = 50V 0.0 -60 -40 -20 0 8.0 9.0 Fig 4. Normalized On-Resistance IRF540NPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 33A ...
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... IRF540NPbF 3000 1MHz iss rss gd 2500 oss iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 C ° 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF540NPbF D.U. d(off ...
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... IRF540NPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 400 15V DRIVER 300 + 200 A 100 V (BR)DSS 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...
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... Duty Factor "D" SD • D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRF540NPbF + + P.W. Period [ ] *** V =10V ...
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... IRF540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...