STP7NK40Z STMicroelectronics, STP7NK40Z Datasheet - Page 2
![MOSFET N-CH 400V 5.4A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP7NK40Z
Manufacturer Part Number
STP7NK40Z
Description
MOSFET N-CH 400V 5.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD7NK40ZT4.pdf
(13 pages)
Specifications of STP7NK40Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 2.7A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
535pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohms
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3200-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP7NK40Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP7NK40ZFP
Manufacturer:
IR
Quantity:
4 250
Company:
Part Number:
STP7NK40ZFP
Manufacturer:
ST
Quantity:
12 500
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
ABSOLUTE MAXIMUM RATINGS
(
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
l
) Pulse width limited by safe operating area
V
Rthj-case
Rthj-amb
dv/dt (1)
Symbol
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
I
I
TOT
AR
T
T
ISO
stg
GSO
DS
GS
AS
D
D
5.4A, di/dt 200A/µs, V
j
l
(
l
)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
= 25 °C, I
DD
V
Parameter
(BR)DSS
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Parameter
= 0)
, V
T
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STP7NK40Z
21.6
0.56
5.4
3.4
70
-
TO-220
1.78
STP7NK40ZFP
-55 to 150
-55 to 150
62.5
21.6 (*)
Value
5.4 (*)
3.4 (*)
3000
2500
Min.
± 30
400
400
0.2
4.5
30
25
TO-220FP
300
Max Value
5
130
Typ.
5.4
STD7NK40Z-1
STD7NK40Z
21.6
0.56
5.4
3.4
70
DPAK
-
IPAK
1.78
100
Max.
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
V
V
A
V