IXTQ182N055T IXYS, IXTQ182N055T Datasheet - Page 6

• Manufacturer Part Number: IXTQ182N055T
• Description: MOSFET N-CH 55V 182A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ182N055T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 182A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 4850pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 182 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 182
• Rds(on), Max, Tj=25°c, (?): 0.0050
• Ciss, Typ, (pf): 4850
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTH182N055T
IXTQ182N055T
Fig. 19. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_182N055T (4V) 6-01-06-A.xls