IXTQ182N055T IXYS, IXTQ182N055T Datasheet - Page 2

• Manufacturer Part Number: IXTQ182N055T
• Description: MOSFET N-CH 55V 182A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ182N055T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 182A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 4850pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 182 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 182
• Rds(on), Max, Tj=25°c, (?): 0.0050
• Ciss, Typ, (pf): 4850
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
SM
d(on)
d(off)
S
r
f
Notes: 1.
rr
one or moreof the following U.S. patents:
fs
J
iss
oss
rss
thJC
thCS
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
2. On through-hole packages, R
location must be 5 mm or less from the package body.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-3P
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 25 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
DS
D
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 30 V, I
= 0.5 V
4,850,072
4,881,106
DSS
D
JM
4,931,844
5,017,508
5,034,796
= 25 A
, I
D
DS(on)
= 25 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
65
Characteristic Values
Characteristic Values
4850
Typ.
Typ.
0.25
100
954
212
114
36
35
53
38
30
32
70
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.42 °C/W
182
490
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
V
A
A
Pins: 1 - Gate
TO-247AD Outline
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
3 - Source 4, TAB - Drain
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
6,727,585
6,759,692
6771478 B2
4.7
2.2
2.2
1.0
Millimeter
IXTQ182N055T
1
IXTH182N055T
3 - Source
.4
2 - Drain
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2
7,063,975 B2
7,071,537
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216