STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 19
![MOSFET N-CH 500V 12A D2PAK](/photos/29/5/290510/d2pak_sml.jpg)
STB14NM50N
Manufacturer Part Number
STB14NM50N
Description
MOSFET N-CH 500V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STB14NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
816pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
2 V
Continuous Drain Current
12 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10644-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Table 14.
Figure 27. DPAK footprint
b. All dimension are in millimeters
Dim.
D1
A0
B0
B1
K0
P0
P1
P2
W
D
R
E
F
T
DPAK (TO-252) tape and reel mechanical data
Min.
10.4
1.65
2.55
0.25
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
6.7
Tape
mm
(b)
Doc ID 16832 Rev 4
6.7
Max.
10.6
12.1
1.85
2.75
0.35
16.3
1.6
7.6
4.1
8.1
2.1
7
1.8
Dim.
G
A
B
C
D
N
T
3
Base qty.
Bulk qty.
1.6
1.6
Min.
12.8
20.2
16.4
1.5
50
Packaging mechanical data
2.3
2.3
Reel
mm
Max.
2500
2500
13.2
18.4
22.4
330
AM08850v1
19/22