STB120NF10T4 STMicroelectronics, STB120NF10T4 Datasheet

MOSFET N-CH 100V 110A D2PAK

STB120NF10T4

Manufacturer Part Number
STB120NF10T4
Description
MOSFET N-CH 100V 110A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB120NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
233nC @ 10V
Input Capacitance (ciss) @ Vds
5200pF @ 25V
Power - Max
312W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0105 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
312000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2452-2

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STB120NF10T4
Manufacturer:
ST
Quantity:
10 000
Part Number:
STB120NF10T4
Manufacturer:
ST
0
Part Number:
STB120NF10T4
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STB120NF10T4
Quantity:
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General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize the
on-resistance. It is therefore suitable as primary
switch in advanced high-efficiency,high-frequency
isolated DC-DC converters for Telecom and
Computer application. It is also intended for any
applications with low gate drive requirements.
Applications
October 2006
Order codes
STW120NF10
STP120NF10
STB120NF10
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
Type
STW120NF10
STP120NF10
STB120NF10
Part number
N-channel 100V - 0.009Ω - 110A - TO-247 - TO-220 - D²PAK
V
100V
100V
100V
DSS
<0.0105Ω
<0.0105Ω
<0.0105Ω
R
DS(on)
W120NF10
P120NF10
B120NF10
Marking
110A
110A
110A
I
D
STP120NF10 - STB120NF10
Rev 6
Internal schematic diagram
STripFET™ II Power MOSFET
D²PAK
Package
TO-247
TO-220
D²PAK
1
3
TO-220
STW120NF10
1
2
3
Packaging
Tape & reel
TO-247
Tube
Tube
www.st.com
1/15
15

Related parts for STB120NF10T4

STB120NF10T4 Summary of contents

Page 1

... Application oriented characterization Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance therefore suitable as primary switch in advanced high-efficiency,high-frequency isolated DC-DC converters for Telecom and Computer application also intended for any applications with low gate drive requirements ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STW120NF10 - STP120NF10 - STB120NF10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STW120NF10 - STP120NF10 - STB120NF10 Table 5. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 6. Source drain diode Symbol I Source-drain current SD (1) I ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/15 STW120NF10 - STP120NF10 - STB120NF10 Figure 2. Figure 4. vs temperature Figure 6. Thermal impedance Transfer characteristics Static drain-source ...

Page 7

STW120NF10 - STP120NF10 - STB120NF10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/15 ...

Page 8

Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/15 STW120NF10 - STP120NF10 - STB120NF10 Figure 13. Gate ...

Page 9

STW120NF10 - STP120NF10 - STB120NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on ...

Page 10

Package mechanical data DIM øP øR S 10/15 STW120NF10 - STP120NF10 - STB120NF10 TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.85 5.15 2.20 2.60 1.0 1.40 2.0 2.40 ...

Page 11

STW120NF10 - STP120NF10 - STB120NF10 DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 ...

Page 12

Package mechanical data DIM 12/15 STW120NF10 - STP120NF10 - STB120NF10 2 D PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. ...

Page 13

STW120NF10 - STP120NF10 - STB120NF10 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 ...

Page 14

Revision history 6 Revision history Table 7. Revision history Date 20-Mar-2006 31-Mar-2006 19-Jun-2006 28-Jun-2006 05-Oct-2006 14/15 STW120NF10 - STP120NF10 - STB120NF10 Revision 2 Preliminary datasheet 3 Typing error 4 New template, no content change 5 New I value on Table ...

Page 15

... STW120NF10 - STP120NF10 - STB120NF10 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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